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    SUB 1GHz NBIoT/ZigBee/LP-WAN/ Wi-SUN  射频前端模组

    KCT8102L

    SUB 1GHz NBIoT/ZigBee/LP-WAN/ Wi-SUN 射频前端模组

    产品介绍

    KCT8102L is a highly-integrated, RF Front-End Integrated Circuit which

    incorporates key RF functionality needed for a TDD-mode operating in the

    860M~930MHz ISM frequency bands. KCT8102L is integrated with a highefficiency

    power amplifier (PA), a low noise amplifier (LNA) with bypass, and

    a single-pole, double-throw (SPDT) switch all in one device.

    KCT8102L has simple and low-voltage 1.6 to 3.6V control logic, and wide

    supply voltage range from 3.0 to 5.25V allowing the KCT8102L to be used in

    battery powered applications.

    KCT8102L is assembled in a compact, low-profile 3x3x0.76mm 16-lead LGA

    package. KCT8102L is the ideal RF front-end solution for implementing sub-

    GHz from 860M~930MHz supporting multiple standards including LP-WAN

    (LoRa, Sigfox, etc.), Wi-SUN, and other loT applications.


    产品规格

    Nominated voltage at 3.3V&4.2V&5V

    +30.5dBm saturated output power at 5.0V

    +29.0dBm saturated output power at 4.2V

    +27.5dBm saturated output power at 3.3V

    Integrated LNA with noise figure of 1.6dB at 5V&4.2V and 1.7dB at 3.3V

    Receive bypass path with low loss: 2.0dB at 5V&4.2V&3.3V

    Support external Receive filter

    ESD Protection Circuitry on All Ports

    Small package: LGA-16L, 3×3×0.76mm (MSL3, 260°C per JEDEC J-STD-020)

    RoHS and REACH Compliant


    SUB 1GHz NBIoT/ZigBee/LP-WAN/ Wi-SUN  射频前端模组

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